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1. product pro?le 1.1 general description 130 w ldmos power transistor for base station applications at frequencies from 1800 mhz to 2000 mhz. [1] acpr 400 and acpr 600 at 30 khz resolution bandwidth. 1.2 features n typical gsm edge performance at frequencies of 1990 mhz, a supply voltage of 28 v and an i dq of 900 ma: u average output power = 60 w u power gain = 14.8 db u ef?ciency = 36 % u acpr 400 = - 62 dbc u acpr 600 = - 73 dbc u evm rms = 2.1 % n easy power control n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (1800 mhz to 2000 mhz) n internally matched for ease of use BLF4G20LS-130 uhf power ldmos transistor rev. 01 1 june 2007 product data sheet table 1. typical performance t case = 25 c; i dq = 900 ma; unless otherwise speci?ed; in a class-ab production test circuit. mode of operation f v ds p l p l(av) g p h d acpr 400 acpr 600 evm rms imd3 (mhz) (v) (w) (w) (db) (%) (dbc) (dbc) (%) (dbc) cw 1930 to 1990 28 130 - 14.5 50 - - - - gsm edge 1930 to 1990 28 - 60 14.8 36 - 62 [1] - 73 [1] 2.1 - 2-tone 1930 to 1990 28 - 65 14.6 38.5 - - - - 30 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 2 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 1.3 applications n rf power ampli?ers for gsm, gsm edge and cdma base stations and multi carrier applications in the 1800 mhz to 2000 mhz frequency range. 2. pinning information [1] connected to ?ange 3. ordering information 4. limiting values table 2. pinning pin description simpli?ed outline symbol 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version BLF4G20LS-130 - earless ?anged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +15 v i d drain current - 15 a t stg storage temperature - 65 +150 c t j junction temperature - 200 c
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 3 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 5. thermal characteristics 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the BLF4G20LS-130 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 900 ma; p l = 130 w (cw); f = 1990 mhz. table 5. thermal characteristics symbol parameter conditions typ max unit r th(j-case) thermal resistance from junction to case t case =80 c; p l =50w 0.49 0.58 k/w table 6. characteristics t j = 25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.1 ma 65 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 230 ma 2.5 2.9 3.5 v v gsq gate-source quiescent voltage v ds = 28 v; i d = 900 ma 2.65 3.15 3.65 v i dss drain leakage current v gs =0v; v ds =28v - - 5 m a i dsx drain cut-off current v gs =v gs(th) +6 v; v ds =10v 35 42 - a i gss gate leakage current v gs = 15 v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d = 7.5 a - 11 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 6 v; i d = 7.5 a - 0.065 - w c rs feedback capacitance v gs =0v; v ds =28v; f= 1mhz -3-pf table 7. application information mode of operation: 2-tone (200 khz tone spacing); f 1 = 1930 mhz; f 2 = 1990 mhz; v ds =28v; i dq = 900 ma; t case =25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit g p power gain p l(pep) = 130 w 13 14.6 - db rl in input return loss p l(pep) = 130 w - - 10 - 7db h d drain ef?ciency p l(pep) = 130 w 34.5 38.5 - % imd3 third order intermodulation distortion p l(pep) = 130 w - - 30 - 27 dbc imd5 ?fth order intermodulation distortion p l(pep) = 130 w - - 39.5 - 35.5 dbc imd7 seventh order intermodulation distortion p l(pep) = 130 w - - 58.5 - 54 dbc
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 4 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 7.2 one-tone cw v ds = 28 v; i dq = 900 ma; t case = 25 c; f = 1990 mhz. fig 1. one-tone cw power gain and drain ef?ciency as functions of load power; typical values p l (w) 0 160 120 40 80 001aag526 12 14 16 g p (db) 10 20 40 60 h d (%) 0 g p h d
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 5 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 7.3 two-tone cw v ds = 28 v; i dq = 900 ma; t case = 25 c; f = 1990 mhz. v ds = 28 v; i dq = 900 ma; t case = 25 c; f = 1990 mhz. fig 2. two-tone cw power gain and drain ef?ciency as functions of load power; typical values fig 3. intermodulation distortion as a function of average load power; typical values v ds = 28 v; t case = 25 c; f = 1990 mhz. (1) i dq = 800 ma. (2) i dq = 900 ma. (3) i dq = 1000 ma. (4) i dq = 1100 ma. fig 4. third order intermodulation distortion as function of average load power; typical values p l (w) 0 100 80 40 60 20 001aag527 13 14 12 15 16 g p (db) h d (%) 11 20 30 10 40 50 0 g p h d p l(av) (w) 0 100 80 40 60 20 001aag528 - 40 - 60 - 20 0 imd (dbc) - 80 imd3 imd5 imd7 p l(av) (w) 0 100 80 40 60 20 001aag529 - 40 - 60 - 20 0 imd3 (dbc) - 80 (1) (2) (3) (4)
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 6 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 7.4 gsm edge v ds = 28 v; i dq = 900 ma; t case = 25 c; f = 1990 mhz. v ds = 28 v; i dq = 900 ma; t case = 25 c; f = 1990 mhz. fig 5. gsm edge power gain and drain ef?ciency as functions of load power; typical values fig 6. gsm edge acpr at 400 khz and at 600 khz as functions of load power; typical values v ds = 28 v; i dq = 850 ma; t case =25 c; f = 960 mhz. v ds =28v; i dq = 850 ma; t case =25 c; f = 960 mhz. fig 7. gsm edge rms evm and peak evm as functions of load power; typical values fig 8. gsm edge acpr and rms evm as functions of drain ef?ciency; typical values p l (w) 0 100 80 40 60 20 001aag530 13 14 12 15 16 g p (db) h d (%) 11 20 30 10 40 50 0 g p h d p l (w) 0 100 80 40 60 20 001aag531 - 70 - 60 - 50 acpr (dbc) - 80 acpr 400 acpr 600 p l (w) 0 100 80 40 60 20 001aag532 8 4 12 16 evm (%) 0 evm m evm rms 001aag533 h d (%) 060 40 20 - 66 - 62 - 70 - 58 - 54 acpr (dbc) - 74 2 3 1 4 5 evm (%) 0 evm rms acpr 400
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 7 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 8. test information [1] american technical ceramics type 100b or capacitor of same quality. striplines are on a double copper-clad taconic rf35 printed-circuit board (pcb) ( e r = 3.5); thickness = 0.76 mm. see t ab le 8 for list of components. fig 9. component layout for 1930 mhz to 1990 mhz production test circuit 001aag534 BLF4G20LS-130 input - pcs rev. 1 c3 c1 c2 BLF4G20LS-130 output - pcs rev. 1 c7 c10 c5 c9 w1 vdd c6 c4 r1 table 8. list of components (see figure 9 ) component description value dimensions remarks c1, c3, c5, c7 chip capacitor 11 pf [1] c2, c9 tantalum capacitor 10 m f c4 chip capacitor 0.8 pf [1] c6 chip capacitor 0.1 pf [1] c8 american technical ceramics (atc) chip capacitor 1 m f 1812x7r105kl2ab c10 philips electrolytic capacitor 220 m f; 35 v r1 philips chip resistor 5.1 w 0603 w1 hand made wire 5 mm
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 8 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 9. package outline fig 10. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 03-01-10 07-05-09 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 9 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description acpr adjacent channel power ratio cdma code division multiple access cw continuous wave edge enhanced data rates for gsm evolution evm error vector magnitude gsm global system for mobile communications ldmos laterally diffused metal oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency rms root mean square vswr voltage standing wave ratio table 10. revision history document id release date data sheet status change notice supersedes BLF4G20LS-130_1 20070601 product data sheet - -
BLF4G20LS-130_1 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 01 1 june 2007 10 of 11 nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BLF4G20LS-130 uhf power ldmos transistor ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 1 june 2007 document identifier: BLF4G20LS-130_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 3 7.2 one-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 two-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.4 gsm edge . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 contact information. . . . . . . . . . . . . . . . . . . . . 10 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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